Hello - I am not much help with Spanish but I know exactly what this means in English so I will try to explain some of the terms and maybe you will know the Spanish terms
Reverse biased - I am assuming you are dealing with a pn junction. Reverse biased means +ve external voltage applied to n-type material and -ve external voltage applied to the p-type material. So your junction is "reverse biased" when the external voltages are like this.
Hole-depleted - In normal p-type material (with no external voltage) there is an abundance of 'holes' - they can be thought of as positive charges (in reality they are the absence of an electron). When you apply a reverse bias to a pn junction (eg a diode) these excess holes will be swept out of the p material and you will be left with no charge carriers in the p or n material. In effect the depletion layer widens beyond its normal size to the width of the diode.
I think what is being explained in your case is that ionizations ( generation of a hole - electron pair ) lower the effective resistance of your junction.
Resistivity is a constant for any material (symbol greek 'rho' ρ) defined
R = ρL/A (R=resistance ohms, ρ=resistivity, L=length metres, A=area (metres squared). You may have seen this in an experiment for calculating the resistivity of a length of wire for example.
Conductivity is the inverse of resistance ( if resistance is high then the conductivity is low and vica versa)
Hope this helps,
¡Suerte!
Correct my Spanish, thanks!
